View IRF3205ZL_4756362.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

hexfet ? power mosfet v dss = 55v r ds(on) = 6.5m i d = 75a this hexfet ? power mosfet utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. additional features of this design are a 175c junction operating temperature, fast switching speed and improved repetitive avalanche rating. these features combine to make this design an extremely efficient and reliable device for use in a wide variety of applications. s d g description advanced process technology ultra low on-resistance 175c operating temperature fast switching repetitive avalanche allowed up to tjmax features irf3205z/zs/zl d 2 pak irf3205zs to-220ab irf3205z to-262 IRF3205ZL absolute maximum ratings parameter units i d @ t c = 25c continuous drain current, v gs @ 10v (silicon limited) i d @ t c = 100c continuous drain current, v gs @ 10v a i d @ t c = 25c continuous drain current, v gs @ 10v (package limited) i dm pulsed drain current p d @t c = 25c power dissipation w linear derating factor w/c v gs gate-to-source voltage v e as (thermally limited) single pulse avalanche energy mj e as (tested ) single pulse avalanche energy tested value i ar avalanche current a e ar repetitive avalanche energy mj t j operating junction and t stg storage temperature range c soldering temperature, for 10 seconds mounting torque, 6-32 or m3 screw thermal resistance parameter typ. max. units r jc junction-to-case ??? 0.90 c/w r cs case-to-sink, flat greased surface 0.50 ??? r ja junction-to-ambient ??? 62 r ja junction-to-ambient (pcb mount) ??? 40 250 180 see fig.12a, 12b, 15, 16 170 1.1 20 max. 110 78 440 75 -55 to + 175 300 (1.6mm from case ) 10 lbf in (1.1n m) www.freescale.net.cn 1 / 12
electrical characteristics @ t j = 25c (unless otherwise specified) parameter min. typ. max. units v (br)dss drain-to-source breakdown voltage 55 ??? ??? v v (br)dss / t j breakdown voltage temp. coefficient ??? 0.051 ??? v/c r ds(on) static drain-to-source on-resistance ??? 4.9 6.5 m v gs(th) gate threshold voltage 2.0 ??? 4.0 v gfs forward transconductance 71 ??? ??? s i dss drain-to-source leakage current ??? ??? 20 a ??? ??? 250 i gss gate-to-source forward leakage ??? ??? 200 na gate-to-source reverse leakage ??? ??? -200 q g total gate charge ??? 76 110 q gs gate-to-source charge ??? 21 ??? nc q gd gate-to-drain ("miller") charge ??? 30 ??? t d(on) turn-on delay time ??? 18 ??? t r rise time ???95??? t d(off) turn-off delay time ??? 45 ??? ns t f fall time ???67??? l d internal drain inductance ??? 4.5 ??? between lead, nh 6mm (0.25in.) l s internal source inductance ??? 7.5 ??? from package and center of die contact c iss input capacitance ??? 3450 ??? c oss output capacitance ??? 550 ??? c rss reverse transfer capacitance ??? 310 ??? pf c oss output capacitance ??? 1940 ??? c oss output capacitance ??? 430 ??? c oss eff. effective output capacitance ??? 640 ??? source-drain ratings and characteristics parameter min. typ. max. units i s continuous source current ??? ??? 75 (body diode) a i sm pulsed source current ??? ??? 440 (body diode) v sd diode forward voltage ??? ??? 1.3 v t rr reverse recovery time ??? 28 42 ns q rr reverse recovery charge ??? 25 38 nc t on forward turn-on time intrinsic turn-on time is negligible (turn-on is dominated by ls+ld) v gs = 0v, v ds = 1.0v, ? = 1.0mhz v gs = 0v, v ds = 44v, ? = 1.0mhz v gs = 0v, v ds = 0v to 44v v gs = 10v v dd = 28v i d = 66a r g = 6.8 t j = 25c, i s = 66a, v gs = 0v t j = 25c, i f = 66a, v dd = 25v di/dt = 100a/ s conditions v gs = 0v, i d = 250 a reference to 25c, i d = 1ma v gs = 10v, i d = 66a v ds = v gs , i d = 250 a v ds = 55v, v gs = 0v v ds = 55v, v gs = 0v, t j = 125c mosfet symbol showing the integral reverse p-n junction diode. v ds = 25v, i d = 66a i d = 66a v ds = 44v conditions v gs = 10v v gs = 0v v ds = 25v ? = 1.0mhz v gs = 20v v gs = -20v irf3205z/zs/zl www.freescale.net.cn 2 / 12
fig 2. typical output characteristics fig 1. typical output characteristics fig 3. typical transfer characteristics fig 4. typical forward transconductance vs. drain current 0.1 1 10 100 v ds , drain-to-source voltage (v) 1 10 100 1000 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) 4.5v 20 s pulse width tj = 25c

0.1 1 10 100 v ds , drain-to-source voltage (v) 10 100 1000 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) 4.5v 20 s pulse width tj = 175c

4.0 5.0 6.0 7.0 8.0 9.0 10.0 11.0 v gs , gate-to-source voltage (v) 1 10 100 1000 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) t j = 25c t j = 175c v ds = 25v 20 s pulse width 0 20406080100 i d, drain-to-source current (a) 0 20 40 60 80 100 120 g f s , f o r w a r d t r a n s c o n d u c t a n c e ( s ) t j = 25c t j = 175c v ds = 10v 20 s pulse width irf3205z/zs/zl www.freescale.net.cn 3 / 12
fig 8. maximum safe operating area fig 6. typical gate charge vs. gate-to-source voltage fig 5. typical capacitance vs. drain-to-source voltage fig 7. typical source-drain diode forward voltage 0.2 0.6 1.0 1.4 1.8 2.2 v sd , source-todrain voltage (v) 0.1 1.0 10.0 100.0 1000.0 i s d , r e v e r s e d r a i n c u r r e n t ( a ) t j = 25c t j = 175c v gs = 0v 1 10 100 v ds , drain-to-source voltage (v) 0 1000 2000 3000 4000 5000 6000 c , c a p a c i t a n c e ( p f ) coss crss ciss v gs = 0v, f = 1 mhz c iss = c gs + c gd , c ds shorted c rss = c gd c oss = c ds + c gd 1 10 100 1000 v ds , drain-tosource voltage (v) 0.1 1 10 100 1000 10000 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) tc = 25c tj = 175c single pulse 1msec 10msec operation in this area limited by r ds (on) 100 sec 0 20 40 60 80 100 120 q g total gate charge (nc) 0 4 8 12 16 20 v g s , g a t e - t o - s o u r c e v o l t a g e ( v ) v ds = 44v vds= 28v vds= 11v i d = 66a irf3205z/zs/zl www.freescale.net.cn 4 / 12
fig 11. maximum effective transient thermal impedance, junction-to-case fig 9. maximum drain current vs. case temperature fig 10. normalized on-resistance vs. temperature 25 50 75 100 125 150 175 t c , case temperature (c) 0 20 40 60 80 100 120 i d , d r a i n c u r r e n t ( a ) limited by package 1e-006 1e-005 0.0001 0.001 0.01 0.1 t 1 , rectangular pulse duration (sec) 0.001 0.01 0.1 1 t h e r m a l r e s p o n s e ( z t h j c ) 0.20 0.10 d = 0.50 0.02 0.01 0.05 single pulse ( thermal response ) notes: 1. duty factor d = t1/t2 2. peak tj = p dm x zthjc + tc -60 -40 -20 0 20 40 60 80 100 120 140 160 180 t j , junction temperature (c) 0.5 1.0 1.5 2.0 2.5 r d s ( o n ) , d r a i n - t o - s o u r c e o n r e s i s t a n c e ( n o r m a l i z e d ) i d = 66a v gs = 10v irf3205z/zs/zl www.freescale.net.cn 5 / 12
q g q gs q gd v g charge fig 13b. gate charge test circuit fig 13a. basic gate charge waveform fig 12c. maximum avalanche energy vs. drain current fig 12b. unclamped inductive waveforms fig 12a. unclamped inductive test circuit t p v (br)dss i as fig 14. threshold voltage vs. temperature r g i as 0.01 t p d.u.t l v ds + - v dd driver a 15v 20v v gs 25 50 75 100 125 150 175 starting t j , junction temperature (c) 0 50 100 150 200 250 300 350 e a s , s i n g l e p u l s e a v a l a n c h e e n e r g y ( m j ) -75 -50 -25 0 25 50 75 100 125 150 175 t j , temperature ( c ) 1.0 2.0 3.0 4.0 v g s ( t h ) g a t e t h r e s h o l d v o l t a g e ( v ) i d = 250 a 1k vcc dut 0 l irf3205z/zs/zl www.freescale.net.cn 6 / 12
fig 15. typical avalanche current vs.pulsewidth fig 16. maximum avalanche energy vs. temperature notes on repetitive avalanche curves , figures 15, 16: (for further info, see an-1005 at www.irf.com) 1. avalanche failures assumption: purely a thermal phenomenon and failure occurs at a temperature far in excess of t jmax . this is validated for every part type. 2. safe operation in avalanche is allowed as long ast jmax is not exceeded. 3. equation below based on circuit and waveforms shown in figures 12a, 12b. 4. p d (ave) = average power dissipation per single avalanche pulse. 5. bv = rated breakdown voltage (1.3 factor accounts for voltage increase during avalanche). 6. i av = allowable avalanche current. 7. t = allowable rise in junction temperature, not to exceed t jmax (assumed as 25c in figure 15, 16). t av = average time in avalanche. d = duty cycle in avalanche = t av f z thjc (d, t av ) = transient thermal resistance, see figure 11) p d (ave) = 1/2 ( 1.3bvi av ) = t/ z thjc i av = 2 t/ [1.3bvz th ] e as (ar) = p d (ave) t av 1.0e-08 1.0e-07 1.0e-06 1.0e-05 1.0e-04 1.0e-03 1.0e-02 1.0e-01 tav (sec) 0.1 1 10 100 1000 a v a l a n c h e c u r r e n t ( a ) 0.05 duty cycle = single pulse 0.10 allowed avalanche current vs avalanche pulsewidth, tav assuming tj = 25c due to avalanche losses. note: in no case should tj be allowed to exceed tjmax 0.01 25 50 75 100 125 150 175 starting t j , junction temperature (c) 0 40 80 120 160 200 e a r , a v a l a n c h e e n e r g y ( m j ) top single pulse bottom 10% duty cycle i d = 66a irf3205z/zs/zl www.freescale.net.cn 7 / 12
fig 17.
for n-channel hexfet power mosfets !"# ! ? $% " # ? "& # ? $#'(#% " # # !)*# p.w. period di/dt diode recovery dv/dt ripple 5% body diode forward drop re-applied voltage reverse recovery current body diode forward current v gs =10v v dd i sd driver gate drive d.u.t. i sd waveform d.u.t. v ds waveform inductor curent d = p. w . period
+ - + + + - - - ? "+," &&#"-. ? +#!*#/#! 0 ? % &&#"-122 ? 0 3#+#0 "##! v ds 90% 10% v gs t d(on) t r t d(off) t f &!#4"5 1 6! 1 0.1 % + - fig 18a. switching time test circuit fig 18b. switching time waveforms irf3205z/zs/zl www.freescale.net.cn 8 / 12
9
dimensions are shown in millimeters (inches) lead assignments 1 - gate 2 - drain 3 - source 4 - drain - b - 1.32 (.052) 1.22 (.048) 3x 0.55 (.022) 0.46 (.018) 2.92 (.115) 2.64 (.104) 4.69 (.185) 4.20 (.165) 3x 0.93 (.037) 0.69 (.027) 4.06 (.160) 3.55 (.140) 1.15 (.045) min 6.47 (.255) 6.10 (.240) 3.78 (.149) 3.54 (.139) - a - 10.54 (.415) 10.29 (.405) 2.87 (.113) 2.62 (.103) 15.24 (.600) 14.84 (.584) 14.09 (.555) 13.47 (.530) 3x 1.40 (.055) 1.15 (.045) 2.54 (.100) 2x 0.36 (.014) m b a m 4 1 2 3 notes: 1 dimensioning & tolerancing per ansi y14.5m, 1982. 3 outline conforms to jedec outline to-220ab. 2 controlling dimension : inch 4 heatsink & lead measurements do n ot include burrs.
example: in t he as semb ly line "c" t his is an irf1010 lot code 1789 as s e mb le d on ww 19, 1997 part number as s e mb l y lot code dat e code year 7 = 1997 line c we e k 19 e xample: t his is an irf1010 lot code 1789 as s embled on ww 19, 1997 in the assembly line "c" lot code part number dat e code for gb production irf3205z/zs/zl www.freescale.net.cn 9 / 12

f 530s t his is an irf 530s wit h lot code 8024 as s embled on ww 02, 2000 in the assembly line "l" as s e mb l y lot code part number dat e code year 0 = 2000 week 02 line l

dimensions are shown in millimeters (inches) dat e code in the assembly line "l" as s emble d on ww 02, 2000 t his is an irf 530s wit h lot code 8024 lot code part number f 530s for gb production irf3205z/zs/zl www.freescale.net.cn 10 / 12
to-262 package outline dimensions are shown in millimeters (inches) to-262 part marking information e x a m p l e : t h i s i s a n i r l 3 1 0 3 l l o t c o d e 1 7 8 9 a s s e m b l y p a r t n u m b e r d a t e c o d e w e e k 1 9 l i n e c l o t c o d e y e a r 7 = 1 9 9 7 a s s e m b l e d o n w w 1 9 , 1 9 9 7 i n t h e a s s e m b l y l i n e " c " igbt 1- gate 2- collec- tor irf3205z/zs/zl www.freescale.net.cn 11 / 12
to-220ab package is not recommended for surface mount application. repetitive rating; pulse width limited by max. junction temperature. (see fig. 11). limited by t jmax , starting t j = 25c, l = 0.08mh r g = 25 , i as = 66a, v gs =10v. part not recommended for use above this value. pulse width 1.0ms; duty cycle 2%. c oss eff. is a fixed capacitance that gives the same charging time as c oss while v ds is rising from 0 to 80% v dss .
limited by t jmax , see fig.12a, 12b, 15, 16 for typical repetitive avalanche performance. this value determined from sample failure population. 100% tested to this value in production. this is only applied to to-220ab pakcage. this is applied to d 2 pak, when mounted on 1" square pcb (fr- 4 or g-10 material). for recommended footprint and soldering techniques refer to application note #an-994.
3 4 4 trr feed direction 1.85 (.073) 1.65 (.065) 1.60 (.063) 1.50 (.059) 4.10 (.161) 3.90 (.153) trl feed direction 10.90 (.429) 10.70 (.421) 16.10 (.634) 15.90 (.626) 1.75 (.069) 1.25 (.049) 11.60 (.457) 11.40 (.449) 15.42 (.609) 15.22 (.601) 4.72 (.136) 4.52 (.178) 24.30 (.95 7) 23.90 (.94 1) 0.368 (.0145) 0.342 (.0135) 1.60 (.063) 1.50 (.059) 13.50 (.532) 12.80 (.504) 330.00 (14.173) max. 27.40 (1.079) 23.90 (.941) 60.00 (2.362) min. 30.40 (1.197) max. 26.40 (1.039) 24.40 (.961) notes : 1. comforms to eia-418. 2. controlling dimension: millimeter. 3. dimension measured @ hub. 4. includes flange distortion @ outer edge. irf3205z/zs/zl www.freescale.net.cn 12 / 12

▲Up To Search▲

Price & Availability of IRF3205ZL

	To Download IRF3205ZL Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .